青草青草视频2免费观看,久久国产精品成人影院,蜜桃av抽搐高潮一区二区,1000部啪啪未满十八勿入下载

ADI晶圓化合物半導(dǎo)體材料

發(fā)布時(shí)間:2021-03-18 17:13:47     瀏覽:1992

ADI晶圓的制取包括襯底制取和外延性工藝。襯底是由半導(dǎo)體材料單晶材料制作而成的晶片。該基板可直接進(jìn)入晶圓制造流程以生產(chǎn)制造半導(dǎo)體元器件或外延性晶圓。外延性是指在單晶襯底上生長(zhǎng)一層新單晶的流程。ADI新的單晶能夠是與襯底相同的材料,還可以是有所不同的材料。外延性能夠產(chǎn)生越來越多種類的材料,使元器件設(shè)計(jì)有越來越多的選擇。

襯底制取的基礎(chǔ)步驟如下:首先,對(duì)半導(dǎo)體材料多晶材料進(jìn)行提煉、摻雜和拉伸,獲得單晶材料。以硅為例子,先將硅砂精煉、復(fù)原為純度98%左右的冶金工業(yè)級(jí)粗硅,再通過多次提煉,獲得電子級(jí)高純度多晶硅,再經(jīng)爐拉獲得單晶硅棒。通過機(jī)械加工、化學(xué)處理、表面拋光和質(zhì)量檢測(cè),獲得了滿足一定標(biāo)準(zhǔn)的單晶拋光片。拋光的目的是更進(jìn)一步去除加工表面上的殘余損傷層。綜上所述拋光片可直接適用于制造元器件,也可用作外延性的襯底材料。

深圳市立維創(chuàng)展科技有限公司,優(yōu)勢(shì)渠道提供ADI晶圓產(chǎn)品華夫格,專業(yè)通道,歡迎合作。

詳情了解ADI Wafer產(chǎn)品請(qǐng)點(diǎn)擊: http    //pkhn.com.cn/public/brand/68.html

或聯(lián)系我們的銷售工程師:  0755-   83642657      QQ    2295048674  

 ADI芯片.jpg

Generic

Material

Description

Order Qty

Package Option

Category

ADA4841-2

ADA4841-2KGD-WP

Dual Low Power Low Noise Rail-Rail OpAmp

Contact ADI

WAFFLEPACK

Amplifiers

ADA4870

ADA4870-KGD-WP

Single Channel High Speed, 1A Output

Contact ADI

WAFFLEPACK

Amplifiers

ADA4870

ADA4870-KGD-DF

Single Channel High Speed, 1A Output

Contact ADI

FILMFRAME

Amplifiers

ADN2820

ADN2820ACHIPS

10Gbps Tranimpedance Amplifier

Contact ADI

WAFFLEPACK

Amplifiers

ADN2880

ADN2880ACHIPS

2.7Gbps Transimpedance Amplifier IC.

Contact ADI

WAFFLEPACK

Amplifiers

OP27

OP27NBC

9/30V, BIP, OP, Low Noise, Low Dr

Contact ADI

WAFFLEPACK

Amplifiers

OP284

OP284CHIPS

3/30V, BIP, OP, Low Noise, RRIO, 2X

Contact ADI

WAFFLEPACK

Amplifiers

OP37

OP37NBC

9/30V, BIP, OP, Low Noise, Avo >-5, 1X

Contact ADI

WAFFLEPACK

Amplifiers

OP37

OP37-001C

9/30V, BIP, OP, Low Noise, Avo >-5, 1X

Contact ADI

FILMFRAME

Amplifiers

OP400

OP400GBC

6/30V, BIP, OP, Low Vos, Low Isy, 4X

Contact ADI

WAFFLEPACK

Amplifiers

OP42

OP42NBC

Fast Settling Precision op amp

Contact ADI

WAFFLEPACK

Amplifiers

OP467

OP467GBC

Quad Precision, High Speed Op Amp

Contact ADI

WAFFLEPACK

Amplifiers

OP77

OP77NBC

6/30V, BIP, OP, Low Vos, Precision, 1X

Contact ADI

WAFFLEPACK

Amplifiers

OP77

OP77-001C

6/30V, BIP, OP, Low Vos, Precision, 1X

Contact ADI

FILMFRAME

Amplifiers

HMC-ALH102G

HMC-ALH102

GaAs HEMT WBand lo Noise amp, 2 - 20 GHz

Contact ADI

GEL_PACK

Amplifiers

HMC-ALH102G

HMC-ALH102-SX

GaAs HEMT WBand lo Noise amp, 2 - 20 GHz

Contact ADI

GEL_PACK

Amplifiers

HMC-ALH482G

HMC-ALH482

GaAs HEMT WBand lo Noise amp, 2 - 22 GHz

Contact ADI

GEL_PACK

Amplifiers

HMC-ALH482G

HMC-ALH482-SX

GaAs HEMT WBand lo Noise amp, 2 - 22 GHz

Contact ADI

GEL_PACK

Amplifiers

HMC-AUH232G

HMC-AUH232

GaAs HEMT WBand Driver amp, DC - 43 GHz

Contact ADI

GEL_PACK

Amplifiers

HMC-AUH249G

HMC-AUH249

GaAs HEMT WBand Driver amp, DC - 35 GHz

Contact ADI

GEL_PACK

Amplifiers

HMC-AUH312G

HMC-AUH312

GaAs HEMT WBand Driver amp, DC - 65 GHz

Contact ADI

GEL_PACK

Amplifiers

HMC460G

HMC460

WBand lo Noise amp Chip, DC - 20 GHz

Contact ADI

GEL_PACK

Amplifiers

HMC460G

HMC460-SX

amp, lo Noise, DC-20 GHz

Contact ADI

GEL_PACK

Amplifiers

HMC462G

HMC462

low Noise amp Chip, 2 - 20 GHz

Contact ADI

GEL_PACK

Amplifiers

HMC462G

HMC462-SX

I.C., 2-20 GHz WBand LNA Die

Contact ADI

GEL_PACK

Amplifiers

HMC463G

HMC463

low Noise amp Chip w/AGC, 2-20 GHz

Contact ADI

GEL_PACK

Amplifiers

HMC463G

HMC463-SX

I.C., 2-20GHz LNA Die

Contact ADI

GEL_PACK

Amplifiers

HMC465G

HMC465

WBand Driver amp Chip, DC - 20 GHz

Contact ADI

GEL_PACK

Amplifiers

HMC465G

HMC465-SX

I.C., DC-20GHz PA Die

Contact ADI

GEL_PACK

Amplifiers

HMC562G

HMC562

WBand Driver amp Chip, 2 - 35 GHz

Contact ADI

GEL_PACK

Amplifiers


推薦資訊

  • IRF540NPBF單N溝道功率MOSFET
    IRF540NPBF單N溝道功率MOSFET 2024-09-11 09:17:13

    IRF540NPBF是一款采用TO-220封裝的N溝道功率MOSFET,額定電壓為100V,最大漏極電流33A,功耗140W,結(jié)溫175°C,具有寬安全工作區(qū)和高電流處理能力。該器件優(yōu)化了低頻應(yīng)用性能,符合JEDEC標(biāo)準(zhǔn),廣泛應(yīng)用于直流電機(jī)驅(qū)動(dòng)、逆變器、開關(guān)電源、照明系統(tǒng)和負(fù)載開關(guān)等高功率場(chǎng)景。

  • AD350A? 層壓板Rogers
    AD350A? 層壓板Rogers 2023-02-06 16:54:53

    AD350A?層壓板增加、陶瓷填充的特殊性PTFE復(fù)合材質(zhì)材料,具有較高的熱導(dǎo)率和低CTE的特征,適合于高功率功放設(shè)計(jì)。當(dāng)極高溫度呈常態(tài)化而需要首先考慮散熱性能的電路板上AD350A?層壓板始終保持正常性能參數(shù)。

在線留言

在線留言